Liquid crystal display device and electronic device provided with the same

ABSTRACT

A liquid crystal display device provided with a thin film transistor with excellent electrical characteristics and reduced off current, for which increase in manufacturing costs can be suppressed while suppressing reduction in yield. A thin film transistor includes a gate electrode provided over a substrate; a gate insulating film provided to cover the substrate and the gate electrode; a first island-shaped semiconductor layer and a second island-shaped semiconductor layer each formed as a stack of a microcrystalline semiconductor layer and a buffer layer with a depression on an upper surface thereof, over the gate electrode with the gate insulating film interposed therebetween; a conductive semiconductor layer; and a conductive layer provided on the conductive semiconductor layer. The conductive semiconductor layer is provided between the first island-shaped semiconductor layer and the second island-shaped semiconductor layer in contact with the gate insulating film.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a liquid crystal display device and anelectronic device using the liquid crystal display device. The presentinvention particularly related to a liquid crystal display device usinga thin film transistor in a pixel portion, and an electronic deviceusing the liquid crystal display device.

2. Description of the Related Art

In recent years, techniques to form thin film transistors using asemiconductor thin film (with a thickness of approximately severalnanometers to several hundreds of nanometers) which is formed over asubstrate having an insulating surface have been put to practical use inmany electronic devices. Thin film transistors are put to practical useparticularly as switching elements in pixel portions of liquid crystaldisplay devices, and research and development is still actively pursued.

As a switching element of a liquid crystal display device, a thin filmtransistor using an amorphous semiconductor film is used for largepanels, and a thin film transistor using a polycrystalline semiconductorfilm is used for small panels. As a method of forming a polycrystallinesemiconductor film, there is known a technique in which a pulsed excimerlaser beam is shaped into a linear laser beam by an optical system andan amorphous silicon film is crystallized by being irradiated whilebeing scanned with the linear laser beam.

Further, as a switching element of an image display device, a thin filmtransistor using a microcrystalline semiconductor film is used (seePatent Document 1: Japanese Published Patent Application No. 4-242724,Patent Document 2: Japanese Published Patent Application No. 2005-49832,and Patent Document 3: U.S. Pat. No. 5,591,987). In addition, as amanufacturing method of a thin film transistor with a purpose ofimproving characteristics of an amorphous semiconductor film, a methodof forming an amorphous silicon film over a gate insulating film,forming a metal film over a top surface thereof, and then irradiatingthe metal film with a diode laser to modify the amorphous silicon filminto a microcrystalline silicon film, is known (see Non Patent Document1: Toshiaki Arai and others, SID '07 DIGEST, 2007, p. 1370-1373).According to this method, the metal film formed over the amorphoussilicon film is provided for converting the light energy of the diodelaser into thermal energy, and should be removed afterwards to completea thin film transistor. In other words, it is a method in which theamorphous silicon film is heated only by conduction heating from themetal film, so that a microcrystalline silicon film, which is amicrocrystalline semiconductor film, is formed.

SUMMARY OF THE INVENTION

A thin film transistor using a polycrystalline semiconductor film hasadvantages in that its mobility is two or more orders of magnitudegreater than that of a thin film transistor using an amorphoussemiconductor film, and a pixel portion of a liquid crystal displaydevice and peripheral driver circuits thereof can be formed over thesame substrate. However, the process of the thin film transistor using apolycrystalline semiconductor film is more complex than that of a thinfilm transistor using an amorphous semiconductor film, because of a stepof crystallizing the polycrystalline semiconductor film; accordingly,there are problems in that yield is decreased and cost is increased.

There is also a problem in that a surface of a microcrystallinesemiconductor film is easily oxidized. Therefore, when microcrystalgrains in a channel formation region are oxidized, an oxide film isformed on surfaces of the microcrystal grains and the oxide film becomesan obstacle to carrier transfer, which causes a problem in that electriccharacteristics of a thin film transistor are impaired.

In terms of easiness of manufacturing, a thin film transistor with aninversely staggered structure is hopeful as a switching element providedfor a pixel portion of a liquid crystal display device. In terms ofimprovement in the aperture ratio of a pixel, improvement in performanceand reduction in size of inversely staggered thin film transistors aredesired; however, there is a problem of increase in leakage currents(also called “off currents”) that flow between source and drain regionswhen the thin film transistor is turned off. Accordingly, there areproblems of difficulty in reducing the size of the thin film transistoras well as reducing the size of the storage capacitor and its powerconsumption.

In view of the above problems, an object of the present invention is tosuggest a liquid crystal display device for which increase inmanufacturing costs can be suppressed while suppressing reduction inyield, which is also provided with a thin film transistor with excellentelectrical characteristics and reduced off current.

A thin film transistor included in a liquid crystal display device ofthe present invention includes a gate electrode provided over asubstrate; a gate insulating film provided to cover the substrate andthe gate electrode; a first island-shaped semiconductor layer and asecond island-shaped semiconductor layer each provided as a stack of amicrocrystalline semiconductor layer and a buffer layer with adepression on an upper surface thereof, over the gate electrode with thegate insulating film interposed therebetween; a conductive semiconductorlayer provided over the buffer layer; and a conductive layer provided incontact with the conductive semiconductor layer, the conductivesemiconductor layer is not provided over the depression, and theconductive semiconductor layer is provided between the firstisland-shaped semiconductor layer and the second island-shapedsemiconductor layer to be in contact with the gate insulating film.

Note that a liquid crystal display device includes a liquid crystalelement. Further, a liquid crystal display device includes a panel inwhich a liquid crystal element is sealed, and a module in which an IC orthe like including a controller is mounted to the panel. Moreover, thepresent invention relates to an element substrate which is a mode beforecompletion of a liquid crystal element in a manufacturing process of theliquid crystal display device, and the element substrate includes ameans for supplying voltage to a liquid crystal element in each ofplural pixels. The element substrate may be specifically in a statewhere only a pixel electrode of a liquid crystal element is formed or ina state after a conductive film to be a pixel electrode is formed andbefore the conductive film is etched into a pixel electrode, and anymode is possible.

Note that the term “liquid crystal display device” in this specificationrefer to image display devices, liquid crystal display devices, andlight sources (including lighting devices). In addition, liquid crystaldisplay devices include all of the following modules: modules providedwith a connector, for example, a flexible printed circuit (FPC), a tapeautomated bonding (TAB) tape, or a tape carrier package (TCP); modulesprovided with a printed wiring board at the end of a TAB tape or a TCP;and modules where an integrated circuit (IC) is directly mounted on aliquid crystal element by a chip-on-glass (COG) method.

According to the present invention, it is possible to provide a liquidcrystal display device provided with a thin film transistor with goodelectrical characteristics and reduced off current, while suppressingreduction in yield as well as increase in manufacturing costs.

BRIEF DESCRIPTION OF DRAWINGS

In the following drawings:

FIGS. 1A and 1B are cross-sectional views showing a manufacturing methodof a liquid crystal display device of the present invention;

FIGS. 2A and 2B are cross-sectional views showing a manufacturing methodof a liquid crystal display device of the present invention;

FIGS. 3A and 3B are cross-sectional views showing a manufacturing methodof a liquid crystal device of the present invention;

FIGS. 4A and 4B are cross-sectional views showing a manufacturing methodof a liquid crystal display device of the present invention;

FIGS. 5A to 5C are top views showing a manufacturing method of a liquidcrystal display device of the present invention;

FIGS. 6A and 6B are a top view and a cross-sectional view showing aliquid crystal display device of the present invention;

FIGS. 7A and 7B are a top view and a cross-sectional view showing aliquid crystal display device of the present invention;

FIGS. 8A and 8B are a top view and a cross-sectional view showing aliquid crystal display device of the present invention;

FIGS. 9A and 9B are top views showing a liquid crystal display device ofthe present invention;

FIG. 10 is a top view showing a microwave plasma CVD apparatus;

FIG. 11 is a diagram showing a liquid crystal display device of thepresent invention;

FIG. 12 is a diagram showing a liquid crystal display device of thepresent invention;

FIG. 13 is a diagram showing a liquid crystal display device of thepresent invention;

FIG. 14 is a diagram showing a liquid crystal display device of thepresent invention;

FIG. 15 is a diagram showing a liquid crystal display device of thepresent invention;

FIG. 16 is a diagram showing a liquid crystal display device of thepresent invention;

FIG. 17 is a diagram showing a liquid crystal device of the presentinvention;

FIG. 18 is a diagram showing a liquid crystal display device of thepresent invention;

FIG. 19 is a diagram showing a liquid crystal display device of thepresent invention;

FIG. 20 is a diagram showing a liquid crystal display device of thepresent invention;

FIG. 21 is a diagram showing a liquid crystal display device of thepresent invention;

FIG. 22 is a diagram showing a liquid crystal display device of thepresent invention;

FIGS. 23A to 23C are diagrams showing liquid crystal display devices ofthe present invention;

FIG. 24 is a diagram showing a liquid crystal display device of thepresent invention;

FIGS. 25A to 25C are diagrams each showing a liquid crystal displaydevice of the present invention;

FIG. 26 is a diagram showing a liquid crystal display device of thepresent invention; and

FIGS. 27A and 27B are graphs each showing a result of measuring amicrocrystalline semiconductor film by Raman spectroscopy.

DETAILED DESCRIPTION OF THE INVENTION Embodiment Mode

Embodiment modes of the present invention will be hereinafter describedwith reference to the drawings. However, the present invention can becarried out in many different modes, and it is easily understood bythose skilled in the art that the mode and detail of the presentinvention can be modified in various ways without departing from thespirit and scope thereof. Therefore, the present invention should not beinterpreted as being limited to the description in the followingembodiment modes.

Embodiment Mode 1

In this embodiment mode, manufacturing steps of a multi-channel thinfilm transistor (hereinafter referred to as a “multi-channel TFT”) usedin a liquid crystal display device is described with reference todrawings. FIGS. 1A and 1B, FIGS. 2A and 2B, FIGS. 3A and 3B, and FIGS.4A and 4B are cross-sectional views illustrating manufacturing steps ofa multi-channel TFT, and FIGS. 5A to 5C, FIGS. 6A and 6B, FIGS. 7A and7B, FIGS. 8A and 8B, and FIGS. 9A and 9B are top views of connectionregions of the multi-channel TFT and a pixel electrode in one pixel.Note that in this specification, “multi-channel” refers to aconfiguration in which a plurality of channel regions are electricallyconnected in series between source and drain regions of a transistor,and a multi-channel transistor is also referred to as a “multi-channelthin film transistor.”

An n-channel multi-channel TFT having a microcrystalline semiconductorfilm is more suitable for use in a driver circuit than a p-channelmulti-channel TFT having a microcrystalline semiconductor film, becausethe n-channel one has a higher mobility. It is desired that allmulti-channel TFTs formed over the same substrate have the same polarityin order to reduce the number of steps. Here, description is made usingan n-channel multi-channel TFT.

As illustrated in FIG. 1A, a gate electrode is formed over a substrate100. As the substrate 100, any of the following substrates can be used:non-alkaline glass substrates made of barium borosilicate glass,aluminoborosilicate glass, aluminosilicate glass, and the like by afusion method or a float method; ceramic substrates; plastic substrateshaving heat resistance enough to withstand a process temperature of thismanufacturing process; and the like. Alternatively, metal substrates ofa stainless alloy and the like with the surface provided with aninsulating film may be employed. When the substrate 100 is mother glass,the substrate may have any of the following sizes: the first generation(320 mm×400 mm), the second generation (400 mm×500 mm), the thirdgeneration (550 mm×650 mm), the fourth generation (680 mm×880 mm, or 730mm×920 mm), the fifth generation (1000 mm×1200 mm, or 1100 mm×1250 mm),the sixth generation (1500 mm×1800 mm), the seventh generation (1900mm×2200 mm), the eighth generation (2160 mm×2460 mm), the ninthgeneration (2400 mm×2800 mm, or 2450 mm×3050 mm), the tenth generation(2950 mm×3400 mm), and the like.

The gate electrode 101 is formed using a metal material such astitanium, molybdenum, chromium, tantalum, tungsten, or aluminum, or analloy material thereof. The gate electrode 101 can be formed in such amanner that a conductive film is formed over the substrate 100 by asputtering method or a vacuum evaporation method; a mask is formed overthe conductive film by a photolithography technique or an inkjet method;and the conductive film is etched using the mask. Note that, as abarrier metal which increases adhesion of the gate electrode 101, anitride film of the above-mentioned metal material may be providedbetween the substrate 100 and the gate electrode 101. For example, astacked-layer structure of aluminum and molybdenum, a stacked-layerstructure of copper and molybdenum, or a stacked-layer structure ofcopper and titanium nitride or tantalum nitride is provided. In thisembodiment mode, the gate electrode 101 is formed by etching of theconductive film formed over the substrate 100 with use of a resist maskformed using a first photomask.

Note that, because a semiconductor film and a wiring are to be formedover the gate electrode 101, it is desired that the gate electrode 101be processed to have tapered end portions in order to preventdisconnection. In addition, although not shown, in this step, a wiringconnected to the gate electrode can also be formed at the same time.

Next, over the gate electrode 101, a gate insulating film 102, amicrocrystalline semiconductor film 103, and a buffer layer 104 areformed in this order. Then, a resist 151 is applied over the bufferlayer 104. Note that it is preferable that the gate insulating film 102,the microcrystalline semiconductor film 103, and the buffer layer 104 beformed successively. By successive formation of the gate insulating film102, the microcrystalline semiconductor film 103, and the buffer layer104 without exposure to the atmosphere, each interface between stackedlayers can be formed without being contaminated by an atmosphericconstituent or a contaminant impurity element floating in theatmosphere. Thus, variations in characteristics of thin film transistorscan be reduced.

The gate insulating film 102 can be formed by a CVD method, a sputteringmethod, or the like using a silicon oxide film, a silicon nitride film,a silicon oxynitride film, or a silicon nitride oxide film. Note that asthe gate insulating film 102, a stack of two layers, a silicon oxidefilm or a silicon oxynitride film and a silicon nitride film or asilicon nitride oxide film, can be formed instead of having a singlelayer of a gate insulating film. Note that the gate insulating film canbe formed by stacking not two layers but three layers of a siliconnitride film or a silicon nitride oxide film, a silicon oxide film or asilicon oxynitride film, and a silicon nitride film or a silicon nitrideoxide film in this order from the substrate side.

Note that a silicon oxynitride film means a film that contains moreoxygen than nitrogen and, in the case where measurements are performedusing Rutherford backscattering spectrometry (RBS) and hydrogen forwardscattering (HFS), includes oxygen, nitrogen, silicon, and hydrogen atconcentrations ranging from 50 at. % to 70 at. %, 0.5 at. % to 15 at. %,25 at. % to 35 at. %, and 0.1 at. % to 10 at. %, respectively. Further,a silicon nitride oxide film means a film that contains more nitrogenthan oxygen and, in the case where measurements are performed using RBSand HFS, includes oxygen, nitrogen, silicon, and hydrogen atconcentrations ranging from 5 at. % to 30 at. %, 20 at. % to 55 at. %,25 at. % to 35 at. %, and 10 at. % to 30 at. %, respectively. Note thatpercentages of nitrogen, oxygen, silicon, and hydrogen fall within theranges given above, where the total number of atoms contained in thesilicon oxynitride film or the silicon nitride oxide film is defined as100 at. %.

The microcrystalline semiconductor film 103 is a film which contains asemiconductor having an intermediate structure between amorphous andcrystalline structures (including a single crystal and a polycrystal).This semiconductor is a semiconductor which has a third state that isstable in terms of free energy, and is a crystalline semiconductor whichhas short-range order and lattice distortion, and column-like orneedle-like crystals with its grains with a size of 0.5 nm to 20 nmgrown in the direction of a normal line with respect to the surface ofthe substrate. In addition, a microcrystalline semiconductor and anon-single crystalline semiconductor are mixed. Microcrystallinesilicon, which is a typical example of a microcrystalline semiconductor,has a Raman spectrum which is shifted to a lower wave number side than521 cm⁻¹ that is a feature of single crystalline silicon. That is, thepeak of a Raman spectrum of microcrystalline silicon exists between 481cm⁻¹ and 521 cm⁻¹, which are features of amorphous silicon and singlecrystalline silicon respectively. In addition, microcrystalline siliconis made to contain hydrogen or halogen of at least 1 at. % or more fortermination of dangling bonds. Moreover, microcrystalline silicon ismade to contain a rare gas element such as helium, argon, krypton, orneon to further enhance its lattice distortion, whereby stability isincreased and a favorable microcrystalline semiconductor film can beobtained. Such a microcrystalline semiconductor film is disclosed in,for example, U.S. Pat. No. 4,409,134.

The microcrystalline semiconductor film can be formed by ahigh-frequency plasma CVD method with a frequency of several tens ofmegahertz to several hundred megahertz or a microwave plasma CVD)apparatus with a frequency of 1 GHz or more. The microcrystallinesemiconductor film can be typically formed using silicon hydride, suchas SiH₄ or Si₂H₆ that is diluted with hydrogen. Alternatively, bydilution with one or plural kinds of rare gas elements of helium, argon,krypton, and neon in addition to silicon hydride and hydrogen, themicrocrystalline semiconductor film can be formed. In that case, theflow rate ratio of hydrogen to silicon hydride is set to be 50:1 to1000:1, preferably, 50:1 to 200:1, more preferably, 100:1. Note that, inplace of silicon hydride, SiH₂Cl₂, SiHCl₃, SiCl₄, SiF₄, or the like canbe used.

A microcrystalline semiconductor film exhibits weak n-type conductivitywhen an impurity element for valence control is not intentionally added.Thus, threshold control of a microcrystalline semiconductor film whichfunctions as a channel formation region of a multi-channel TFT can bedone by addition of an impurity element which imparts p-typeconductivity at the same time as or after the film formation. A typicalexample of an impurity element which imparts p-type conductivity isboron, and an impurity gas such as B₂H₆ or BF₃ may be mixed into siliconhydride at a proportion of 1 ppm to 1000 ppm, preferably, 1 ppm to 100ppm. The concentration of boron may be set to be, for example, 1×10¹⁴atoms/cm³ to 6×10¹⁶ atoms/cm³.

In addition, the oxygen concentration of the microcrystallinesemiconductor film is preferably 5×10¹⁹ atoms/cm³ or less, morepreferably, 1×10¹⁹ atoms/cm³ or less and each of the nitrogenconcentration and the carbon concentration is preferably 3×10¹⁸atoms/cm³ or less. By decreases in concentrations of oxygen, nitrogen,and carbon mixed into the microcrystalline semiconductor film, themicrocrystalline semiconductor film can be prevented from becoming an ntype.

The microcrystalline semiconductor film 103 is formed to a thickness ofless than or equal to 200 nm, preferably, from 1 nm to 100 nm, morepreferably, from 5 nm to 50 nm. The microcrystalline semiconductor film103 functions as a channel formation region of a multi-channel TFT to beformed later. When the thickness of the microcrystalline semiconductorfilm 103 is within the range from 5 nm to 50 nm, the multi-channel TFTto be formed later becomes a fully depleted type. In addition, becausethe deposition rate of the microcrystalline semiconductor film 103 islow, i.e., a tenth to a hundredth of the deposition rate of an amorphoussemiconductor film, a decrease of thickness leads to an increase ofthroughput. Furthermore, because the microcrystalline semiconductor filmcontains microcrystals, it has a lower resistance than an amorphoussemiconductor film. Therefore, a multi-channel TFT using themicrocrystalline semiconductor film for its channel formation region hascurrent-voltage characteristics represented by a curve with a steepslope in a rising portion, has an excellent response as a switchingelement, and can be operated at high speed. With the use of themicrocrystalline semiconductor film in a channel formation region of amulti-channel TFT, fluctuation of a threshold voltage of a multi-channelTFT can be suppressed. Therefore, a liquid crystal display device withless variation of electrical characteristics can be manufactured.

The microcrystalline semiconductor film has a higher mobility than anamorphous semiconductor film. Thus, by using for a switching element ofa liquid crystal element a multi-channel TFT in which a channelformation region is formed of the microcrystalline semiconductor film,the area of the channel formation region, that is, the area of themulti-channel TFT, can be decreased. Accordingly, the area occupied bythe multi-channel TFT in a single pixel is decreased, and an apertureratio of the pixel can be increased.

Further, with a purpose of improving electrical characteristics of themicrocrystalline semiconductor film, laser beam irradiation may beperformed on a surface of the microcrystalline semiconductor film overthe gate insulating film. The laser beam is emitted at an energy densitythat does not melt the crystalline semiconductor film. In other words,laser treatment of the crystalline semiconductor film is solid-phasecrystal growth performed by radiation heating without melting thecrystalline semiconductor film. That is, the laser treatment utilizes acritical region where the accumulated crystalline semiconductor filmdoes not go into a liquid phase, and in that sense, the laser treatmentmay be called “critical growth” as well.

The laser beam can be effective to an interface between themicrocrystalline semiconductor film and the gate insulating film.Accordingly, with crystals on a surface of the microcrystallinesemiconductor film as seeds, basically columnar crystals grow byprogression of solid-phase crystal growth from the surface towards theinterface with the gate insulating film. The solid-phase crystal growthby laser treatment does not enlarge the crystal grain diameter, butrather improves crystallinity in a thickness direction of the film. Inthe laser treatment, by focusing the laser beam in a long rectangularshape (linear laser beam), a microcrystalline semiconductor film over a730 mm×920 mm glass substrate for example, can be treated by scanningthe laser beam once. In this case, the overlap ratio of the linear laserbeam is to be 0% to 90% (preferably 0% to 67%). Accordingly, processingtime per one substrate can be reduced to improve productivity. The shapeof the laser beam is not limited to a linear shape, and a similartreatment can be performed with a planar shape laser beam. Further, thepresent laser treatment is not limited to the above glass substratesize, and can be applied to substrates of various sizes. By the lasertreatment, crystallinity at an interface between the gate insulatingfilm and the microcrystalline semiconductor film is improved, and aneffect of improving electrical characteristics of the thin filmtransistor with a bottom gate structure is achieved. In such criticalgrowth, roughness (convex bodies called “ridges”) on a surface observedin conventional low-temperature polycrystalline silicon is not formed,and smoothness is maintained on a surface of a semiconductor film afterlaser treatment. As in this embodiment mode, a microcrystallinesemiconductor film that is obtained by emitting a laser beam directly ona microcrystalline semiconductor film after film formation step has agrowth mechanism and film quality that are clearly different from thoseof a microcrystalline semiconductor film that is simply accumulated orthose of a microcrystalline semiconductor film that is modified byconduction heating (described in Non-Patent Document 1).

The buffer layer 104 can be formed by a plasma CVD method using siliconhydride such as SiH₄ or Si₂H₆. Alternatively, by dilution of siliconhydride mentioned above with one or plural kinds of rare gas elementsselected from helium, argon, krypton, and neon, an amorphoussemiconductor film can be formed. With use of hydrogen at a flow ratewhich is 1 to 20 times, preferably, 1 to 10 times, more preferably, 1 to5 times higher than that of silicon hydride, a hydrogen-containingamorphous semiconductor film can be formed. With the use of siliconhydride mentioned above and nitrogen or ammonia, a nitrogen-containingamorphous semiconductor film can be formed. With use of silicon hydridementioned above and a gas containing fluorine, chlorine, bromine, oriodine (F₂, Cl₂, Br₂, I₂, HF, HCl, HBr, HI, or the like), an amorphoussemiconductor film containing fluorine, chlorine, bromine, or iodine canbe formed.

Alternatively, as the buffer layer 104, an amorphous semiconductor filmcan be formed by sputtering with hydrogen or a rare gas using anamorphous semiconductor as a target. In this case, by inclusion ofammonia, nitrogen, or N₂O in an atmosphere, a nitrogen-containingamorphous semiconductor film can be formed. Alternatively, by inclusionof a gas including fluorine, chlorine, bromine, or iodine (F₂, Cl₂, Br₂,I₂, HF, HCl, HBr, HI, or the like) in an atmosphere, an amorphoussemiconductor film containing fluorine, chlorine, bromine, or iodine canbe formed.

Still alternatively, the buffer layer 104 may be formed by using anamorphous semiconductor film on a surface of the microcrystallinesemiconductor film 103 by a plasma CVD method or a sputtering method,and then hydrogenation, nitridation, or halogenation of a surface of theamorphous semiconductor film may be performed through processing withhydrogen plasma, nitrogen plasma, or halogen plasma. Yet alternatively,the surface of the amorphous semiconductor film may be processed withhelium plasma, neon plasma, argon plasma, krypton plasma, or the like.

The buffer layer 104 is preferably formed using an amorphoussemiconductor film which does not contain microcrystal grains.Therefore, when the buffer layer 104 is formed by a high-frequencyplasma CVD method or a microwave plasma CVD method with a frequency ofseveral tens of megahertz to several hundred megahertz, formationconditions are preferably controlled such that an amorphoussemiconductor film does not contain microcrystal grains.

The buffer layer 104 is partly etched in a later process for formingsource and drain regions in some cases, and in that case, the bufferlayer 104 is preferably formed at such a thickness that a part of thebuffer layer 104 is left after the etching. Typically, the thickness ofthe buffer layer is preferably from 150 nm to 400 nm. In a liquidcrystal display device in which application voltage to a multi-channelTFT is high (e.g., approximately 15 V), by setting the thickness of thebuffer layer 104 within the above range, the withstand voltage isenhanced, and even when a high voltage is applied to a multi-channelTFT, the multi-channel TFT can be prevented from deteriorating.

By formation of an amorphous semiconductor film, moreover, an amorphoussemiconductor film containing hydrogen, nitrogen, or halogen, on thesurface of the microcrystalline semiconductor film 103, surfaces ofmicrocrystal grains contained in the microcrystalline semiconductor film103 can be prevented from being oxidized naturally. In particular, in aregion where an amorphous semiconductor is in contact with microcrystalgrains, a crack is likely to be formed due to localized stress. Whenthis crack is exposed to oxygen, the microcrystal grains are oxidized,whereby silicon oxide is formed. However, by formation of the bufferlayer on the surface of the microcrystalline semiconductor film 103, themicrocrystal grains can be prevented from being oxidized. Furthermore,by formation of the buffer layer, the microcrystalline semiconductorfilm can be prevented from being mixed with an etching residue which isgenerated in forming source and drain regions later.

The buffer layer 104 is formed using an amorphous semiconductor film oran amorphous semiconductor film containing hydrogen, nitrogen, orhalogen. An amorphous semiconductor film has a larger energy gap thanthe microcrystalline semiconductor film (the energy gap of the amorphoussemiconductor film is 1.1 eV to 1.5 eV and the energy gap of themicrocrystalline semiconductor film is 1.6 eV to 1.8 eV) and has ahigher resistance, and has a lower mobility, i.e., a fifth to a tenth ofthat of the microcrystalline semiconductor film. Therefore, the bufferlayer formed between the microcrystalline semiconductor film and sourceand drain regions in a multi-channel TFT to be formed later functions asa high-resistant region and the microcrystalline semiconductor filmfunctions as a channel formation region. Accordingly, the off current ofthe multi-channel TFT can be reduced. When the multi-channel TFT is usedas a switching element of a liquid crystal display device, the contrastof the liquid crystal display device can be improved.

Note that after forming the microcrystalline semiconductor film, anamorphous silicon hydride film may be formed by a plasma CVD method at300° C. to 400° C. as the buffer layer. By this film forming process,hydrogen is supplied to the microcrystalline semiconductor film, and thesame effect as hydrogenizing the microcrystalline semiconductor film canbe obtained. In other words, by depositing an amorphous silicon hydridelayer over the microcrystalline semiconductor film, hydrogen isdispersed in the microcrystalline semiconductor film and a dangling bondcan be terminated.

Here, a plasma CVD apparatus that can successively form the gateinsulating film 102 to the buffer layer 104 is described with referenceto FIG. 10. FIG. 10 is a schematic diagram showing an uppercross-sectional view of a plasma CVD apparatus, which has a structurewhere a loading chamber 1010, an unloading chamber 1015, a reactionchamber (1) 1011, a reaction chamber (2) 1012, and a reaction chamber(3) 1013 are provided around a common chamber 1020. Between the commonchamber 1020 and the other chambers, gate valves 1022 to 1026 areprovided so that processes performed in the chambers do not interferewith each other. Substrates are loaded into a cassette 1028 in theloading chamber 1010 and a cassette 1029 in the unloading chamber 1015and carried to the reaction chambers (1) 1011 to (3) 1013 with atransport means 1021 of the common chamber 1020. In this apparatus, areaction chamber can be allocated for each of different kinds ofdeposition films, and a plurality of different films can be formedsuccessively without exposure to the atmosphere. For example, the plasmaCVD apparatus can have a structure in which the gate insulating film 102is formed in the reaction chamber (1) 1011, the microcrystallinesemiconductor film 103 and the buffer layer 104 are formed in thereaction chamber (2) 1012 as stacked layers, and the reaction chamber(3) 1013 is left as a spare chamber.

In this manner, with a microwave plasma CVD apparatus where a pluralityof chambers is connected, the gate insulating film 102, themicrocrystalline semiconductor film 103, and the buffer layer 104 can beformed at the same time. Thus, mass productivity can be improved. Inaddition, even when maintenance or cleaning is performed in one ofreaction chambers, film formation processes can be performed in theother reaction chambers, whereby takt time for film formation can beshortened. Furthermore, each interface between stacked layers can beformed without being contaminated by an atmospheric constituent or acontaminant impurity element floating in the atmosphere. Thus,variations in characteristics of thin film transistors can be reduced.

Note that the microwave plasma CVD apparatus illustrated in FIG. 10 isprovided with the loading chamber and the unloading chamber separately,which may be a single loading/unloading chamber. In addition, the plasmaCVD apparatus may be provided with a plurality of spare chambers. Bypreheating of a substrate in the spare chamber, heating time neededbefore film formation in each reaction chamber can be shortened; thus,throughput can be improved.

Referring back to FIG. 1A, the resist can be a positive resist or anegative resist. In this embodiment mode, a positive resist is used anda resist mask 151 is formed using a second photomask. Further, asillustrated in FIG. 1B, the microcrystalline semiconductor film 103 andthe buffer layer 104 are etched using the resist mask 151 formed overthe buffer layer, and an island-shaped semiconductor film 105 a (alsocalled the first island-shaped semiconductor film) and an island-shapedsemiconductor film 105 b (also called the second island-shapedsemiconductor film) are formed over the gate electrode 101. FIG. 1Bcorresponds to a cross-sectional view of the diagram in FIG. 5A along aline A-B (excluding the gate insulating film 102).

Note that by making an end portion of each of the island-shapedsemiconductor film 105 a and the island-shaped semiconductor film 105 bbeing tapered, occurrence of a leakage current between source and drainregions formed over the island-shaped semiconductor films 105 a, 105 band the microcrystalline semiconductor film 103 at a bottom portion ofthe island-shaped semiconductor films 105 a, 105 b can be prevented. Antaper angle of the end portion of the island-shaped semiconductor films105 a, 105 b is 90° to 30°, preferably 80° to 45°. By having such anangle, disconnection of the source electrode or the drain electrode dueto a step can be prevented.

Next, a conductive semiconductor film 106 is formed to cover theisland-shaped semiconductor film 105 a and the island-shapedsemiconductor film 105 b. At this time, it is important that theconductive semiconductor film 106 be provided between the island-shapedsemiconductor film 105 a and the island-shaped semiconductor film 105 bso as to be in contact with the gate insulating film 102, as illustratedin FIG. 2A. The conductive semiconductor film 106 provided in contactwith the gate insulating film 102 that exists between the island-shapedsemiconductor film 105 a and the island-shaped semiconductor film 105 bfunctions as a path for current in a multi-channel TFT that is formedlater.

In the case of forming an n-channel multi-channel TFT, phosphor may beadded to the conductive semiconductor film 106 as a typical impurityelement, and an impurity gas such as PH₃ may be added to siliconhydride. Further, in the case of forming a p-channel multi-channel TFT,boron may be added as a typical impurity element, and an impurity gassuch as B₂H₆ may be added to silicon hydride. The conductivesemiconductor film 106 can be formed of a microcrystalline semiconductoror an amorphous semiconductor. Alternatively, the conductivesemiconductor film 106 may be formed as stacked layers of an amorphoussemiconductor film to which an impurity imparting one conductivity typeis added and a microcrystalline semiconductor film to which an impurityimparting one conductivity type is added. By forming on a buffer layer104 side an amorphous semiconductor film to which an impurity impartingone conductivity type is added, and then forming thereover amicrocrystalline semiconductor film to which an impurity imparting oneconductivity type is added, resistance becomes gradual; accordingly,carriers flow easily and mobility can be increased. The conductivesemiconductor film 106 can be formed with a thickness of 2 nm to 50 nm.By making the thickness of the conductive semiconductor film thin,throughput can be improved.

Note that it is preferable that an impurity element imparting oneconductivity type such as phosphorus or boron be not added to the bufferlayer 104. In particular, it is preferable that boron contained in themicrocrystalline semiconductor film for threshold control or phosphoruscontained in a conductive semiconductor film be not mixed into thebuffer layer 104. As a result of this, by elimination of a region whereleakage current is generated due to an impurity, leakage current can bedecreased. By formation of an amorphous semiconductor film, to which animpurity imparting one conductivity type such as phosphorus or boron isnot added, between the conductive semiconductor film and themicrocrystalline semiconductor film, the diffusion of the impuritycontained in each of the microcrystalline semiconductor film and sourceand drain regions can be prevented.

Next, the conductive film 107 is formed over the conductivesemiconductor film 106. Conductive film 107 is preferably formed using asingle layer or stacked layers of aluminum, or an aluminum alloy towhich an element to improve heat resistance or an element to prevent ahillock, e.g., copper, silicon, titanium, neodymium, scandium, ormolybdenum, is added. Alternatively, the conductive film 107 may have astacked-layer structure where a film in contact with the conductivesemiconductor film is formed of titanium, tantalum, molybdenum,tungsten, or a nitride of any of these elements and an aluminum film oran aluminum alloy film is formed thereover. Still alternatively, theconductive film 107 may have a stacked-layer structure where an aluminumfilm or an aluminum alloy film is sandwiched between upper and lowerfilms of titanium, tantalum, molybdenum, tungsten, or a nitride of anyof these elements. Here, as the conductive film 107, a conductive filmwith a structure in which three conductive films are stacked is given,and examples are a stacked-layer conductive film where an aluminum filmis sandwiched by molybdenum films and a stacked-layer conductive filmwhere an aluminum film is sandwiched by titanium films. The conductivefilm 107 is formed by a sputtering method or a vacuum evaporationmethod.

As illustrated in FIG. 2B, resists are applied over the conductive film107, and a resist mask 152 is formed using a third photomask. For thethird photomask, a multi-tone mask may be used such as a gray tone maskor a half tone mask. By developing after light exposure using amulti-tone mask, a resist mask having regions with different thicknessescan be formed.

Next, the conductive semiconductor film 106 and the conductive film 107are divided by etching using the resist mask 152. As a result, a region108 a, a region 108 b, and a region 108 c, each serving as a sourceregion or a drain region in a multi-channel transistor structure asillustrated in FIG. 3A, can be formed. Note that in this etching step, aportion of the buffer layer 104 of each of the island-shapedsemiconductor film 105 a and the island-shaped semiconductor film 105 bis also etched. Note that FIG. 3A corresponds to a cross-sectional viewof the diagram in FIG. 5B along a line A-B (excluding the gateinsulating film 102).

By the above process, a multi-channel TFT 109 can be formed. Further, athin film transistor can be formed using three photomasks. Note that a“multi-channel thin film transistor” in this specification refers to athin film transistor with a structure including a plurality of channelsper a pair of source and drain regions. Using the multi-channel TFT 109illustrated in FIG. 3A as an example, if the region 108 a is a sourceregion, carriers (electrons) pass through the channel region of thefirst island-shaped semiconductor film 105, the region 108 b, and thechannel region of the second island-shaped semiconductor film 105 b, andflows into the region 108 c which serves as a drain region.

In the inversely staggered multi-channel thin film transistor describedin this embodiment mode, the gate insulating film, the microcrystallinesemiconductor film, the buffer layer, the source and drain regions, andthe source and drain electrodes are stacked over the gate electrode, andthe buffer layer covers the surface of the microcrystallinesemiconductor film which functions as a channel formation region. Inaddition, a depression is formed in a part of the buffer layer, andregions other than the depression are covered with the source and drainregions. That is, because there is distance between the source regionand the drain region due to the depression formed in the buffer layer,leakage current between the source and drain regions can be reduced. Inaddition, because the depression is formed by etching of a part of thebuffer layer, an etching residue which is generated in the formationstep of the source and drain regions can be removed. Accordingly,leakage current (parasitic channel) can be prevented from beinggenerated between the source and drain regions through the residue.

The buffer layer is formed between the microcrystalline semiconductorfilm that functions as a channel formation region and the source anddrain regions. In addition, the buffer layer covers the surface of themicrocrystalline semiconductor film. Because the buffer layer, which isformed to have higher resistance than the microcrystalline semiconductorfilm, is extended to regions between the microcrystalline semiconductorfilm and the source and drain regions, occurrence of leakage current canbe reduced, and deterioration due to application of high voltage can besuppressed. Moreover, because the amorphous semiconductor film, thesurface of which is subjected to termination by hydrogen, is formed asthe buffer layer on the surface of the microcrystalline semiconductorfilm, the microcrystalline semiconductor film can be prevented frombeing oxidized, and an etching residue which is generated in theformation step of the source and drain regions can be prevented frombeing mixed into the microcrystalline semiconductor film. Accordingly,the thin film transistor has excellent electric characteristics andexcellent withstand voltage.

Next, as illustrated in FIG. 3A, the insulating film 110 is formed overthe multi-channel TFT 109. The insulating film 110 can be formed in asimilar manner to the gate insulating film 102. Note that the insulatingfilm 110 is provided to prevent entry of a contaminant impurity such asan organic substance, a metal substance, or moisture floating in theatmosphere and is preferably a dense film. By use of a silicon nitridefilm as the insulating film 110, the oxygen concentration in the bufferlayer 104 can be made to be 5×10¹⁹ atoms/cm³ or less, preferably, 1×10¹⁹atoms/cm³ or less.

Next, as illustrated in FIG. 4A, a contact hole 111 is formed in theinsulating film 110. Then, as illustrated in FIG. 4B, a pixel electrode112 in contact with the region 108 c is formed in the contact hole 111.Note that FIG. 4B corresponds to a cross-sectional view of the diagramin FIG. 5C along a line A-B.

The pixel electrode 112 can be formed using a light-transmittingconductive material such as indium oxide containing tungsten oxide,indium zinc oxide containing tungsten oxide, indium oxide containingtitanium oxide, indium tin oxide containing titanium oxide, indium tinoxide (hereinafter referred to as ITO), indium zinc oxide, or indium tinoxide to which silicon oxide is added.

Alternatively, the pixel electrode 112 can be formed using a conductivecomposition containing a conductive high-molecular compound (alsoreferred to as a conductive polymer). It is preferable that the pixelelectrode formed using the conductive composition have a sheetresistance of 10000 Ω/square or less and a light transmittance of 70% ormore at a wavelength of 550 nm. In addition, it is preferable that theresistivity of the conductive high-molecular compound contained in theconductive composition be 0.1Ω·cm or less.

As the conductive high-molecular compound, a so-called π electronconjugated conductive high-molecular compound can be used. Examplesinclude polyaniline and its derivatives, polypyrrole and itsderivatives, polythiophene and its derivatives, copolymers of two ormore kinds of them, and the like.

Accordingly, an element substate that can be used in a liquid crystaldisplay device can be formed.

Next, a characteristic of the multi-channel TFT of the present inventionis described using diagrams that correspond to a top view and across-sectional view of the multi-channel TFT of the present inventiondescribed in FIGS. 1A and 1B, FIGS. 2A and 2B, FIGS. 3A and 3B, FIGS. 4Aand 4B, and FIGS. 5A to 5C.

The top view illustrated in FIG. 6A corresponds to the top viewillustrated in FIG. 5C. In addition, FIG. 6B illustrating across-sectional view along a line A-B of the top view illustrated inFIG. 6A corresponds to the cross-sectional view illustrated in FIG. 4B.The top view in FIG. 6A illustrates an arrangement of a scan line 601, asignal line 602, a first island-shaped semiconductor film 603, a firstisland-shaped electrode 604, a second island-shaped semiconductor film605, a second island-shaped electrode 606, and a pixel electrode 607.

In addition, a conductive film, an insulating film, and the like thatform the above-described multi-channel TFT are stacked and provided forthe wirings and electrodes in FIG. 6B. In a similar manner to FIGS. 1Aand 1B, FIGS. 2A and 2B, FIGS. 3A and 3B, FIGS. 4A and 4B, and FIGS. 5Ato 5C, a gate insulating film 652, a microcrystalline semiconductor film653, a buffer layer 654, a conductive semiconductor film 656, aconductive film 657, an insulating film 660, and a pixel electrode 662are stacked and provided over a gate electrode 651 that extends from thescan line 601. Note that it is acceptable as long as the gate electrode651 is provided to overlap with the channel region of themicrocrystalline semiconductor film 653, and the gate electrode maybranch out into a plurality of gate electrodes to be arranged.

In the case where the multi-channel TFT illustrated in FIG. 6A is ann-channel transistor, carriers flow between the signal line 602 and thepixel electrode 607, through the first island-shaped semiconductor film603, the first island-shaped electrode 604, the second island-shapedsemiconductor film 605, and the second island-shaped electrode 606. Inother words, the carriers move through two places; the channel region ofthe first island-shaped semiconductor film 603 and the channel region ofthe second island-shaped semiconductor film 605 illustrated in FIG. 6A.Accordingly, occurrence of a leakage current from the pixel electrode607 to the signal line 602 can be drastically suppressed. Further, acurrent that flows between the signal line 602 and the pixel electrode607 when the multi-channel TFT is turned on flows through themicrocrystalline semiconductor film 653 of the first island-shapedsemiconductor film 603 and the second island-shaped semiconductor film605; therefore, a field-effect mobility of 1 cm²/V·sec to 20 cm²/V·seccan be obtained.

Further, the multi-channel TFT described in this embodiment mode is aninversely staggered thin film transistor. This inversely staggered thinfilm transistor requires a smaller number of manufacturing steps and canachieve cost reduction. In addition, by formation of a channel formationregion with a microcrystalline semiconductor film, a field-effectmobility of 1 cm²/V·sec to 20 cm²/V·sec can be achieved. Accordingly,this thin film transistor can be used as a switching element of a pixelin a pixel portion and as an element included in a scan line (gate line)side driver circuit.

According to this embodiment mode, a thin film transistor with highlyreliable electrical characteristics can be manufactured.

Embodiment Mode 2

In this embodiment mode, diagrams that correspond to a top view and across-sectional view of the multi-channel TFT described in aboveEmbodiment Mode 1 that are different in structure from those illustratedin FIGS. 6A and 6B are described.

The top view illustrated in FIG. 7A illustrates an arrangement of a scanline 701, a signal line 702, a first island-shaped semiconductor film703, a first island-shaped electrode 704, a second island-shapedsemiconductor film 705, a second island-shaped electrode 706, and apixel electrode 707.

In addition, in a similar manner to FIG. 6B, a conductive film, aninsulating film, and the like that form a multi-channel TFT are stackedand provided for the wirings and electrodes in FIG. 7A. In a similarmanner to FIGS. 1A and 1B, FIGS. 2A and 2B, FIGS. 3A and 3B, FIGS. 4Aand 4B, and FIGS. 5A to 5C of above Embodiment Mode 1, a gate insulatingfilm 752, a microcrystalline semiconductor film 753, a buffer layer 754,a conductive semiconductor film 756, a conductive film 757, aninsulating film 760, and a pixel electrode 762 are stacked over a gateelectrode 751 that extends from the scan line 701.

A difference between FIG. 7A and FIG. 6A is that a top view of the firstisland-shaped electrode 704 has a shape that is surrounded by aconductive film that extends from the signal line 702 and the secondisland-shaped electrode 706, which is a conductive film that isconnected to the pixel electrode 707. Specifically, top views of theconductive film that extends from the signal line 702 and the secondisland-shaped electrode 706 that is a conductive film connected to thepixel electrode 707, are each C-like shaped (or U-like shaped). At thistime, since the top view of the first island-shaped electrode 704 has ashape that is surrounded by the C-like shaped conductive film and theC-like shaped second island-shaped electrode 706 that is a conductivefilm connected to the pixel electrode 707, it is preferable that thefirst island-shaped electrode 704 is round-shaped, elliptical-shaped, orrectangular-shaped. Note that as illustrated in FIG. 9A, the distancebetween the conductive film extending from the signal line 702 and thefirst island-shaped electrode 704 that face each other are approximatelythe same, the distance between the second island-shaped electrode 706and the first island-shaped electrode 704 that face each other areapproximately the same, and accordingly, variation in movement distanceof carriers flowing through the channel region can be reduced. By theconductive film and the second island-shaped electrode 706 connected tothe pixel electrode 707 each being C-like shaped, it is possible toincrease an area of the channel region of a multi-channel TFT throughwhich carriers move; accordingly, amount of current can be increased,and an area of the multi-channel TFT can be reduced.

Note that in the case where the multi-channel TFT illustrated in FIG. 7Ais an n-channel transistor, electrons which are carriers flow betweenthe signal line 702 and the pixel electrode 707 through the firstisland-shaped semiconductor film 703, the first island-shaped electrode704, the second island-shaped semiconductor film 705, and the secondisland-shaped electrode 706, in a similar manner to FIG. 6A. In otherwords in a similar manner to FIG. 6B, carriers move through two places,a channel region of the first island-shaped semiconductor film 703 and achannel region of the second island-shaped semiconductor film 705illustrated in FIG. 7B. Accordingly, occurrence of a leakage currentfrom the pixel electrode 707 to the signal line 702 can be drasticallysuppressed. Further, a current that flows between the signal line 702and the pixel electrode 707 when the multi-channel TFT is turned onflows through the microcrystalline semiconductor film 753 of the firstisland-shaped semiconductor film 703 and the second island-shapedsemiconductor film 705; therefore, a field-effect mobility of 1cm²/V·sec to 20 cm²/V·sec can be obtained.

Further, the multi-channel TFT described in this embodiment mode is aninversely staggered thin film transistor. This inversely staggered thinfilm transistor requires a smaller number of manufacturing steps and canachieve cost reduction. In addition, by formation of a channel formationregion with a microcrystalline semiconductor film, a field-effectmobility of 1 cm²/V·sec to 20 cm²/V·sec can be achieved. Accordingly,this thin film transistor can be used as a switching element of a pixelin a pixel portion and as an element included in a scan line (gate line)side driver circuit.

According to this embodiment mode, a thin film transistor with highlyreliable electrical characteristics can be manufactured.

Embodiment Mode 3

In this embodiment mode, diagrams that correspond to a top view and across-sectional view of the multi-channel TFT described in aboveEmbodiment Modes 1 and 2 that are different from those illustrated inFIGS. 6A and 6B, and FIGS. 7A and 7B are described.

The top view illustrated in FIG. 8A illustrates an arrangement of a scanline 801, a signal line 802, a first island-shaped semiconductor film803, a first island-shaped electrode 804, a second island-shapedsemiconductor film 805, a second island-shaped electrode 806, and apixel electrode 807.

In addition, in a similar manner to FIG. 6B, a conductive film, aninsulating film, and the like that form a multi-channel TFT are stackedand provided for the wirings and electrodes in FIG. 8A. In a similarmanner to FIGS. 1A and 1B, FIGS. 2A and 2B, FIGS. 3A and 3B, FIGS. 4Aand 4B, and FIGS. 5A to 5C of above Embodiment Mode 1, a gate insulatingfilm 852, a microcrystalline semiconductor film 853, a buffer layer 854,a conductive semiconductor film 856, a conductive film 857, aninsulating film 860, and a pixel electrode 862 are stacked over a gateelectrode 851 that extends from the scan line 801.

A difference between FIG. 8A and FIG. 6A is that a top view of the firstisland-shaped electrode 804 has a shape that surrounds a conductive filmthat extends from the signal line 802 and a part of the secondisland-shaped electrode 806, which is a conductive film that isconnected to the pixel electrode 807. Specifically, the top view of thefirst island-shaped electrode 804 is X-like shaped. Similarly, the topview of the first island-shaped electrode 804 has a shape where twoC-like shaped (or U-like shaped) conductive layers are arranged adjacentto each other to form an X-like shape as shown in FIG. 8A. At this time,top views of the conductive film extending from the signal line 802 andthe second island-shaped electrode 806 that is a conductive filmconnected to the pixel electrode 807 each have a shape where they aresurrounded by the first island-shaped electrode 804; accordingly, it ispreferable that the conductive films that are surrounded by the X-likeshaped first island-shaped electrode have elliptically shaped portions,or provided as a rectangular-shaped protruding portion. Note that asillustrated in FIG. 9B, the distance between the conductive filmextending from the signal line 802 and the first island-shaped electrode804 that face each other are approximately the same, the distancebetween the second island-shaped electrode 806 and the firstisland-shaped electrode 804 that face each other are approximately thesame, and accordingly, variation in movement distance of carriersflowing through the channel region ca be reduced. By the firstisland-shaped electrode 804 being X-like shaped, it is possible toincrease an area of a channel region of a multi-channel TFT;accordingly, an amount of current can be increased, and an area of themulti-channel TFT ca be reduced.

Note that when the multi-channel TFT illustrated in FIG. 8A is ann-channel transistor, electrons which are carriers flow between thesignal line 802 and the pixel electrode 807, through the firstisland-shaped semiconductor film 803, the first island-shaped electrode804, the second island-shaped semiconductor film 805, and the secondisland-shaped electrode 806, in a similar manner to FIG. 6A. In otherwords, in a similar manner to FIG. 6B, carriers move through two places,a channel region of the first island-shaped semiconductor film 803 and achannel region of the second island-shaped semiconductor film 805.Accordingly, occurrence of a leakage current from the pixel electrode807 to the signal line 802 can be greatly suppressed. Further, a currentthat flows between the signal line 802 and the pixel electrode 807 whenthe multi-channel TFT is turned on flows through the microcrystallinesemiconductor film 853 of the first island-shaped semiconductor film 803and the second island-shaped semiconductor film 805; therefore, afield-effect mobility of 1 cm²/V·sec to 20 cm²/V·sec can be obtained.

Further, the multi-channel TFT described in this embodiment mode is aninversely staggered thin film transistor. This inversely staggered thinfilm transistor requires a smaller number of manufacturing steps and canachieve cost reduction. In addition, by formation of a channel formationregion with a microcrystalline semiconductor film, a field-effectmobility of 1 cm²/V·sec to 20 cm²/V·sec can be achieved. Accordingly,this thin film transistor can be used as a switching element of a pixelin a pixel portion and as an element included in a scan line (gate line)side driver circuit.

According to this embodiment mode, a thin film transistor with highlyreliable electrical characteristics can be manufactured.

Embodiment Mode 4

In this embodiment mode, a liquid crystal display device including themulti-channel TFT described in Embodiment Mode 1 is described.

First, a vertical alignment (VA) liquid crystal display device isdescribed. A VA liquid crystal display device is a kind of a mode inwhich alignment of liquid crystal molecules of a liquid crystal panel iscontrolled. The VA liquid crystal display device is a mode in whichliquid crystal molecules are vertical to a panel surface when voltage isnot applied. In particular, in this embodiment mode, it is devised thata pixel is divided into several regions (sub-pixels) so that moleculesare aligned in different directions in the respective regions. This isreferred to as multi-domain design. In the following description, aliquid crystal display device with multi-domain design is described.

FIGS. 12 and 13 show a pixel electrode and a counter electrode,respectively. FIG. 12 is a plan view of a substrate on which the pixelelectrode is formed. FIG. 11 shows a cross-sectional structure of thediagram in FIG. 12 along a line A-B. FIG. 13 is a plan view of asubstrate on which the counter electrode is formed. Further, FIG. 14 isa circuit diagram of a pixel included in the liquid crystal displaydevice. Hereinafter, description is made with reference to thesedrawings.

FIG. 11 illustrates a state in which a substrate 1100 provided with amulti-channel TFT 1128, a pixel electrode 1124 connected to themulti-channel TFT 1128, and a storage capacitor portion 1130 overlapswith a counter substrate 1101 provided with a counter electrode 1140 andthe like, and a liquid crystal is injected therebetween.

At the position where the counter substrate 1101 is provided with aspacer 1142, a light shielding film 1132, a first colored film 1134, asecond colored film 1136, a third colored film 1138 (a colored film isalso cold color filter.), and the counter electrode 1140 are formed.With this structure, the height of a projection 1144 for controllingalignment of the liquid crystal and the height of the spacer 1142 vary.An alignment film 1148 is formed over the pixel electrode 1124.Similarly, the counter electrode 1140 is provided with an alignment film1146. A liquid crystal layer 1150 is formed between the alignment films1146 and 1148.

Although a columnar spacer is used for the spacer 1142 in thisembodiment mode, a bead spacer may be dispersed. Further, the spacer1142 may be formed over the pixel electrode 1124 provided over thesubstrate 1100.

The multi-channel TFT 1128, the pixel electrode 1124 connected to themulti-channel TFT 1128, and the storage capacitor portion 1130 areformed over the substrate 1100. The pixel electrode 1124 is connected toa wiring 1118 via a contact hole 1123 which penetrates an insulatingfilm 1120 which covers the multi-channel TFT 1128, the wiring 1118, andthe storage capacitor portion 1130 and also penetrates an insulatingfilm 1122 which covers the insulating film 1120. The multi-channel TFTshown in Embodiment Modes 1 to 3 can be used as the multi-channel TFT1128 as appropriate. The storage capacitor portion 1130 includes a firstcapacitor wiring 1104 which is formed in a similar manner to a gatewiring 1102 of the multi-channel TFT 1128, a gate insulating film 1106,and a second capacitor wiring 1117 which is formed in a similar mannerto a wiring 1116 and the wiring 1118.

A liquid crystal element is formed by the pixel electrode 1124, theliquid crystal layer 1150, and the counter electrode 1140 overlappingwith each other.

FIG. 12 shows a structure over the substrate 1100. The pixel electrode1124 is formed using a material described in Embodiment Mode 1. Thepixel electrode 1124 is provided with a slit 1125. The slit 1125 is forcontrolling alignment of the liquid crystal.

A multi-channel TFT 1129, a pixel electrode 1126 connected to themulti-channel TFT 1129, and a storage capacitor portion 1131 illustratedin FIG. 12 can be formed in a similar manner to the multi-channel TFT1128, the pixel electrode 1124 and the storage capacitor portion 1130,respectively. Both the multi-channel TFT 1128 and the multi-channel TFT1129 are connected to the wiring 1116. A pixel of this liquid crystalpanel includes the pixel electrodes 1124 and 1126. Each of the pixelelectrodes 1124 and 1126 is a sub-pixel.

FIG. 13 shows a structure of the counter substrate. The counterelectrode 1140 is formed over the light shielding film 1132. The counterelectrode 1140 is preferably formed using a material similar to amaterial of the pixel electrode 1124. The projection 1144 forcontrolling alignment of the liquid crystal is formed over the counterelectrode 1140. Moreover, the spacer 1142 is formed corresponding to theposition of the light shielding film 1132.

FIG. 14 shows a circuit diagram of this pixel structure. Both themulti-channel TFT 1128 and the multi-channel TFT 1129 are connected tothe gate wiring 1102 and the wiring 1116. In this case, when potentialsof the capacitor wiring 1104 and a capacitor wiring 1105 are differentfrom each other, operations of liquid crystal elements 1151 and 1152 canvary. That is, alignment of the liquid crystal is precisely controlledand a viewing angle is increased by individual control of potentials ofthe capacitor wirings 1104 and 1105.

When voltage is applied to the pixel electrode 1124 provided with theslit 1125, electric field distortion (an oblique electric field) isgenerated near the slit 1125. The slit 1125 and the projection 1144 onthe counter substrate 1101 are alternately arranged in an engagingmanner and thus, an oblique electric field is effectively generated tocontrol alignment of the liquid crystal, so that a direction ofalignment of the liquid crystal varies depending on location. That is, aviewing angle of the liquid crystal panel is increased by multi-domaindesign.

Next, another VA liquid crystal display device, which is different fromthe above-described device, is described with reference to FIG. 15, FIG.16, FIG. 17, and FIG. 18.

FIGS. 15 and 16 each show a pixel structure of the VA liquid crystaldisplay device. FIG. 16 is a plan view of the substrate 1100. FIG. 15shows a cross-sectional structure of the diagram in FIG. 16 along a lineA-B. Hereinafter, description is made with reference to these drawings.

In the pixel structure described in FIG. 15, FIG. 16, FIG. 17, and FIG.18, a plurality of pixel electrodes are included in one pixel, and a TFTis connected to each pixel electrode. Each multi-channel TFT is drivenby a different gate signal. That is, a pixel with multi-domain designhas a structure in which signals supplied to the respective pixelelectrodes are individually controlled.

Via the contact hole 1123, the pixel electrode 1124 is connected to themulti-channel TFT 1128 using the wiring 1118. Via a contact hole 1127,the pixel electrode 1126 is connected to the multi-channel TFT 1129using a wiring 1119. The gate wiring 1102 of the multi-channel TFT 1128and a gate wiring 1103 of the multi-channel TFT 1129 are separated sothat different gate signals can be given. In contrast, the wiring 1116functioning as a data line is used in common for the multi-channel TFTs1128 and 1129. As each of the multi-channel TFTs 1128 and 1129, any ofthe multi-channel TFTs shown in Embodiment Modes 1 to 3 can be used asappropriate.

The pixel electrodes 1124 and 1126 have different shapes and areseparated by a slit. The pixel electrode 1126 is formed so as tosurround the external side of the pixel electrode 1124 which is spreadin a V-shape. Timing of voltage application is made to vary between thepixel electrodes 1124 and 1126 by the multi-channel TFTs 1128 and 1129in order to control alignment of the liquid crystal. FIG. 18 shows ancircuit diagram of this pixel structure. The multi-channel TFT 1128 isconnected to the gate wiring 1102. The multi-channel TFT 1129 isconnected to the gate wiring 1103. When different gate signals aresupplied to the gate wirings 1102 and 1103, operation timings of themulti-channel TFTs 1128 and 1129 can vary.

The counter substrate 1101 is provided with the light shielding film1132, the second colored film 1136, and the counter electrode 1140.Moreover, a planarization film 1137 is formed between the second coloredfilm 1136 and the counter electrode 1140 to prevent alignment disorderof the liquid crystal. FIG. 17 shows a structure on the countersubstrate. A slit 1141 is formed in the counter electrode 1140, which isused in common by different pixels. The slit 1141 and the slit 1125 onthe pixel electrodes 1124 and 1126 side are alternately arranged in anengaging manner; thus, an oblique electric field is effectivelygenerated, and alignment of the liquid crystal can be controlled.Accordingly, a direction in which the liquid crystal is aligned can varydepending on location, and a viewing angle is increased.

A first liquid crystal element 1151 is formed by overlapping of thepixel electrode 1124, the liquid crystal layer 1150, and the counterelectrode 1140. A second liquid crystal element 1152 is formed byoverlapping of the pixel electrode 1126, the liquid crystal layer 1150,and the counter electrode 1140. This is a multi-domain structure inwhich the first liquid crystal element and the second liquid crystalelement are included in one pixel.

Next, a horizontal electric field liquid crystal display device isdescribed. The horizontal electric field mode is a method in which anelectric field is horizontally applied to liquid crystal molecules in acell, whereby the liquid crystal is driven to express a gray scale. Bythis method, a viewing angle can be increased to approximately 180degrees. Hereinafter, a liquid crystal display device employing thehorizontal electric field mode is described.

FIG. 19 illustrates a state in which the substrate 1100 provided withthe multi-channel TFT 1128 and the pixel electrode 1124 connected to themulti-channel TFT 1128 overlaps with the counter substrate 1101, andliquid crystal is injected therebetween. The counter substrate 1101 isprovided with the light shielding film 1132, the second colored film1136, the planarization film 1137, and the like. Since the pixelelectrodes 1124, 1107 are provided over the substrate 1100, they are notprovided over the counter substrate 1101. The liquid crystal layer 1150is formed between the substrate 1100 and the counter substrate 1101.

A first pixel electrode 1107, the capacitor wiring 1104 connected to thefirst pixel electrode 1107, and the multi-channel TFT 1128 shown inEmbodiment Modes 1 to 3 are formed over the substrate 1100. The firstpixel electrode 1107 can be formed using a material similar to any ofthose of the pixel electrodes shown in Embodiment Modes 1 to 3. Thefirst pixel electrode 1107 is formed in a shape which iscompartmentalized roughly in accordance with a pixel shape. Note thatthe gate insulating film 1106 is formed over the first pixel electrode1107 and the capacitor wiring 1104.

The wirings 1116 and 1118 of the multi-channel TFT 1128 are formed overthe gate insulating film 1106. The wiring 1116 serves as a data lineextending in one direction, through which a video signal is transmittedin a liquid crystal panel, and is connected to a source region andserves as one of a source electrode and a drain electrode. The wiring1118 serves as the other of the source electrode and the drainelectrode, and is connected to the second pixel electrode 1124.

The insulating film 1120 is formed over the wirings 1116 and 1118. Overthe insulating film 1120, the second pixel electrode 1124 connected tothe wiring 1118 via a contact hole 1123 formed in the insulating film1120 is formed. The second pixel electrode 1124 is formed using amaterial similar to those of the pixel electrodes shown in EmbodimentMode 1 to 3.

In such a manner, the multi-channel TFT 1128 and the second pixelelectrode 1124 connected to the multi-channel TFT 1128 are formed overthe substrate 1100. Note that a storage capacitor is formed between thefirst pixel electrode 1107 and the second pixel electrode 1124.

FIG. 20 is a plan view illustrating a structure of the pixel electrodes1124, 1107. The second pixel electrode 1124 is provided with the slit1125. The slit 1125 is for controlling alignment of the liquid crystal.In this case, an electric field is generated between the first pixelelectrode 1107 and the second pixel electrode 1124. The thickness of thegate insulating film 1106 formed between the first pixel electrode 1107and the second pixel electrode 1124 is 50 to 200 nm, which issufficiently thin compared with the liquid crystal layer with athickness of 2 to 10 μm. Accordingly, an electric field is generatedsubstantially in parallel (in a horizontal direction) to the substrate1100. Alignment of the liquid crystal is controlled by the electricfield. The liquid crystal molecules are horizontally rotated using theelectric field which is approximately parallel to the substrate. In thiscase, since the liquid crystal molecules are parallel to the substratein any state, contrast or the like is hardly affected by change in angleof viewing, and a viewing angle is increased. Further, since both thefirst pixel electrode 1107 and the second pixel electrode 1124 arelight-transmitting electrodes, an aperture ratio can be increased.

Next, another example of a horizontal electric field liquid crystaldisplay device is described.

FIGS. 21 and 22 each show a pixel structure of an IPS liquid crystaldisplay device. FIG. 22 is a plan view. FIG. 21 shows a cross-sectionalstructure of the diagram in FIG. 22 along a line A-B. Hereinafter,description is made with reference to these drawings.

FIG. 21 illustrates a state in which the substrate 1100 provided withthe multi-channel TFT 1128 and the pixel electrode 1124 connected to themulti-channel TFT 1128 overlaps with the counter substrate 1101, andliquid crystal is injected therebetween. The counter substrate 1101 isprovided with the light shielding film 1132, the colored film 1136, theplanarization film 1137, and the like. Since the pixel electrode isprovided over the substrate 1100, it is not provided over the countersubstrate 1101. The liquid crystal layer 1150 is formed between thesubstrate 1100 and the counter substrate 1101. Reference numerals 1146,1148 denote alignment films.

A common potential line 1109 and the multi-channel TFT 1128 shown inEmbodiment Modes 1 to 3 are formed over the substrate 1100. The commonpotential line 1109 can be formed at the same time as the gate wiring1102 of the multi-channel TFT 1128. The pixel electrode 1124 is formedin a shape which is compartmentalized roughly in accordance with a pixelshape.

The wirings 1116 and 1118 of the multi-channel TFT 1128 are formed overthe gate insulating film 1106. The wiring 1116 serves as a data lineextending in one direction, through which a video signal is transmittedin a liquid crystal panel, and serves as one of a source electrode and adrain electrode. The wiring 1118 serves as the other of the sourceelectrode and the drain electrode, and is connected to the pixelelectrode 1124.

The insulating film 1120 is formed over the wirings 1116 and 1118. Overthe insulating film 1120, the pixel electrode 1124 connected to thewiring 1118 via the contact hole 1123 formed in the insulating film 1120is formed. The pixel electrode 1124 is formed using a material similarto those of the pixel electrodes shown in Embodiment Modes 1 to 3. Notethat as illustrated in FIG. 22, the pixel electrode 1124 is formed so asto generate a horizontal electric field with a comb-shaped electrodewhich is formed at the same time as the common potential line 1109.Moreover, the pixel electrode 1124 is formed so that comb-teeth portionsof the pixel electrode 1124 are alternately engaged with the comb-shapedelectrode which is formed at the same time as the common potential line1109. Reference numeral 1108 denotes a signal line.

Alignment of the liquid crystal is controlled by an electric fieldgenerated between a potential applied to the pixel electrode 1124 and apotential of the common potential line 1109. The liquid crystalmolecules are horizontally rotated using the electric field which isapproximately parallel to the substrate. In this case, since the liquidcrystal molecules are parallel to the substrate in any state, contrastor the like is hardly affected by change in angle of viewing, and aviewing angle is increased.

In such a manner, the multi-channel TFT 1128 and the pixel electrode1124 connected to the multi-channel TFT 1128 are formed over thesubstrate 1100. A storage capacitor is formed by the common potentialline 1109, a capacitor electrode 1115, and the gate insulating film 1106provided therebetween. The capacitor electrode 1115 and the pixelelectrode 1124 are connected via a contact hole 1133.

Through the above-described steps, the liquid crystal display device canbe formed. Since a thin film transistor with small off current andhighly-reliable electric properties is used in the liquid crystaldisplay device of this embodiment mode, the liquid crystal displaydevice has high contrast and high visibility. Further, since a thin filmtransistor using a microcrystalline silicon film formed without a lasercrystallization process is used, a liquid crystal display device withhigh visibility can be formed with high productivity.

Note that in the liquid crystal display device of the present invention,by using a multi-channel TFT including a microcrystalline semiconductoras a transistor included in a pixel, the pixel can be operated at highspeed. For example, when a case of using an amorphous semiconductor filmand a case of using a microcrystalline semiconductor film are compared,the mobility of a transistor is larger in the case of using amicrocrystalline film; therefore, switching of the transistor can beoperated at high speed. Further, increase of frame frequency, insert ofa black frame, or the like can also be realized.

In the case of increasing the frame frequency, it is desirable togenerate data of a screen depending on a direction of motion of animage. That is, motion compensation is performed to interpolate thedata. By increasing the frame frequency and interpolating date in thismanner, a display characteristic of a moving image can be improved and asmooth display can be performed. For example, by more than doubling (forexample, 120 hertz or 100 hertz), preferably, more than quadrupling (forexample, 240 hertz or 200 hertz) the frame frequency, a blurry image orimage lag of a moving image can be reduced. In that case, by alsooperating a scan line driver circuit with increased driving frequency,the frame frequency can be increased.

In the case of performing black frame insertion, it is made so thatimage data and data that becomes a black display can be supplied to apixel portion. As a result, it is similar to impulse driving, and imagelag can be reduced. In that case, by also operating a scan line drivercircuit with increased driving frequency, black frame/screen insertioncan be performed.

Embodiment Mode 5

Next, a structure of a display panel, which is one mode of a liquidcrystal display device of the present invention, is described below.

FIGS. 23A to 23C show a mode of a display panel in which a signal linedriver circuit 6013 which is separately formed is connected to a pixelportion 6012 formed over a substrate 6011. The pixel portion 6012 and ascan line driver circuit 6014 are each formed using a thin filmtransistor using a microcrystalline semiconductor film. When the signalline driver circuit is formed using a transistor which has higherfield-effect mobility compared with a multi-channel TFT using amicrocrystalline semiconductor film, an operation of the signal linedriver circuit which demands higher driving frequency than that of thescan line driver circuit can be stabilized. Note that the signal linedriver circuit 6013 may be formed using a transistor including a singlecrystalline semiconductor, a thin film transistor including apolycrystalline semiconductor, or a transistor using an SOI substrate.The pixel portion 6012, the signal line driver circuit 6013, and thescan line driver circuit 6014 are each supplied with a potential of apower supply, a variety of signals, and the like via an FPC 6015.

Note that both the signal line driver circuit and the scan line drivercircuit may be formed over the same substrate as the pixel portion.

When a driver circuit is separately formed, a substrate over which thedriver circuit is formed is not necessarily attached to a substrate overwhich a pixel portion is formed, and may be attached over an FPC, forexample. FIG. 23B shows a mode of a liquid crystal display device panelin which a signal line driver circuit 6023 is separately formed and isconnected to a pixel portion 6022 and a scan line driver circuit 6024formed over a substrate 6021. The pixel portion 6022 and the scan linedriver circuit 6024 are each formed using a thin film transistorincluding a microcrystalline semiconductor film. The signal line drivercircuit 6023 is connected to the pixel portion 6022 via an FPC 6025. Thepixel portion 6022, the signal line driver circuit 6023, and the scanline driver circuit 6024 are each supplied with a potential of a powersupply, a variety of signals, and the like via the FPC 6025.

Alternatively, only part of a signal line driver circuit or part of ascan line driver circuit may be formed over the same substrate as apixel portion by using a multi-channel TFT including a microcrystallinesemiconductor film, and the rest of the driver circuits may beseparately formed and electrically connected to the pixel portion. FIG.23C shows a mode of a liquid crystal display device panel in which ananalog switch 6033 a included in a signal line driver circuit is formedover a substrate 6031, which is the same substrate over which a pixelportion 6032 and a scan line driver circuit 6034 are formed, and a shiftregister 6033 b included in the signal line driver circuit is separatelyformed over a different substrate and attached to the substrate 6031.The pixel portion 6032 and the scan line driver circuit 6034 are eachformed using a multi-channel TFT including a microcrystallinesemiconductor film. The shift register 6033 b included in the signalline driver circuit is connected to the pixel portion 6032 via an FPC6035. The pixel portion 6032, the signal line driver circuit, and thescan line driver circuit 6034 are each supplied with a potential of apower supply, a variety of signals, and the like via the FPC 6035.

As shown in FIGS. 23A to 23C, in a liquid crystal display device of thepresent invention, all or a part of the driver circuit can be formedover the same substrate as the pixel portion, using a microcrystallinesemiconductor film using a multi-channel TFT.

Note that a connection method of a substrate which is separately formedis not particularly limited, and a known COG method, wire bondingmethod, TAB method, or the like can be used. Further, a connectionposition is not limited to the positions shown in FIGS. 23A to 23C aslong as electrical connection is possible. Moreover, a controller, aCPU, a memory, or the like may be formed separately and connected.

Note that a signal line driver circuit used in the present invention isnot limited to a mode including only a shift register and an analogswitch. In addition to the shift register and the analog switch, anothercircuit such as a buffer, a level shifter, or a source follower may beincluded. Moreover, the shift register and the analog switch are notalways necessary to be provided. For example, a different circuit suchas a decoder circuit by which a signal line can be selected may be usedinstead of the shift register, or a latch or the like may be usedinstead of the analog switch.

FIG. 24 is a block diagram of a liquid crystal display device of thepresent invention. The liquid crystal display device shown in FIG. 24includes a pixel portion 501 including a plurality of pixels eachprovided with a liquid crystal element, a scan line driver circuit 502which selects each pixel, and a signal line driver circuit 503 whichcontrols input of a video signal to a selected pixel.

In FIG. 24, the signal line driver circuit 503 includes a shift register504 and an analog switch 505. A clock signal (CLK) and a start pulsesignal (SP) are input to the shift register 504. When the clock signal(CLK) and the start pulse signal (SP) are input, a timing signal isgenerated in the shift register 504 and input to the analog switch 505.

A video signal is supplied to the analog switch 505. The analog switch505 samples the video signal in accordance with the timing signal andsupplies the resulting signal to a signal line of the next stage.

Next, a structure of the scan line driver circuit 502 is described. Thescan line driver circuit 502 includes a shift register 506 and a buffer507. The scan line driver circuit 502 may also include a level shifterin some cases. In the scan line driver circuit 502, when the clocksignal (CLK) and the start pulse signal (SP) are input to the shiftregister 506, a selection signal is generated. The generated selectionsignal is buffered and amplified by the buffer 507, and the resultingsignal is supplied to a corresponding scan line. Gates of transistors inpixels of one line are connected to the scan line. Further, since thetransistors in the pixels of one line should be turned on at the sametime, a buffer through which large current can flow is used as thebuffer 507.

In a full color liquid crystal display device, when video signalscorresponding to R (red), G (green), or B (blue) are sequentiallysampled and supplied to a corresponding signal line, the number ofterminals for connecting the shift register 504 and the analog switch505 corresponds to approximately ⅓ of the number of terminals forconnecting the analog switch 505 and the signal line in the pixelportion 501. Accordingly, when the analog switch 505 and the pixelportion 501 are formed over the same substrate, the number of terminalsused for connecting substrates which are separately formed can besuppressed compared with the case where the analog switch 505 and thepixel portion 501 are formed over different substrates; thus, occurrenceprobability of defective connection can be suppressed, and yield can beincreased.

Note that although the scan line driver circuit 502 shown in FIG. 24includes the shift register 506 and the buffer 507, the scan line drivercircuit 502 may include the shift register 506.

Note that structures of the signal line driver circuit and the scan linedriver circuit are not limited to the structures shown in FIG. 24, whichare merely one mode of the liquid crystal display device of the presentinvention.

This embodiment mode can be implemented in combination with any of thestructures described in the other embodiment modes.

Embodiment Mode 6

The liquid crystal display device obtained according to the presentinvention can be used for an active matrix liquid crystal module. Thatis, the present invention can be implemented in any of electronicdevices having a display portion in which such an active matrix liquidcrystal module is incorporated.

Examples of such electronic devices include cameras such as a videocamera and a digital camera, a head-mounted display (a goggle-typedisplay), a car navigation system, a projector, a car stereo, a personalcomputer, and a portable information terminal (e.g., a mobile computer,a cellular phone, and an e-book reader). FIGS. 25A to 25C show examplesof such electronic devices.

FIG. 25A shows a television device. The television device can becompleted by incorporating a display module into a housing as shown inFIG. 25A. A display panel with an FPC attached is also referred to as adisplay module. A main screen 2003 is formed using the display module,and other accessories such as a speaker portion 2009 and an operationswitch are provided. Thus, the television device can be completed.

As shown in FIG. 25A, a display panel 2002 using a liquid crystalelement is incorporated into a housing 2001. The television device canreceive general TV broadcast by a receiver 2005, and can be connected toa wired or wireless communication network via a modem 2004 so thatone-way (from a sender to a receiver) or two-way (between a sender and areceiver or between receivers) information communication can beperformed. The television device can be operated by a switchincorporated into the housing or a separate remote control unit 2006.The remote control unit may include a display portion 2007 fordisplaying information to be output.

Further, the television device may include a sub screen 2008 formedusing a second display panel for displaying channels, sound volume, andthe like, in addition to the main screen 2003. In this structure, themain screen 2003 may be formed using a liquid crystal display panel withan excellent viewing angle, and the sub screen may be formed using aliquid crystal display panel in which display is performed with lowpower consumption. Alternatively, when reduction in power consumption isprioritized, a structure may be employed in which the main screen 2003is formed using a liquid crystal display panel, the sub screen is formedusing a liquid crystal display panel, and the sub screen can be turnedon and off.

FIG. 26 is a block diagram of a main structure of a television device. Adisplay panel 900 is provided with a pixel portion 921. A signal linedriver circuit 922 and a scan line driver circuit 923 may be mounted onthe display panel 900 by a COG method.

As for other external circuits, the television device includes a videosignal amplifier circuit 925 which amplifies a video signal amongsignals received by a tuner 924; a video signal processing circuit 926which converts a signal output from the video signal amplifier circuit925 into a color signal corresponding to each color of red, green, andblue; a control circuit 927 which converts the video signal into aninput specification of a driver IC; and the like. The control circuit927 outputs signals to each of the scan line side and the signal lineside. When digital driving is performed, a structure may be employed inwhich a signal dividing circuit 928 is provided on the signal line sideand an input digital signal is divided into m signals to be supplied.

Among the signals received by the tuner 924, an audio signal istransmitted to an audio signal amplifier circuit 929, and an outputthereof is supplied to a speaker 933 through an audio signal processingcircuit 930. A control circuit 931 receives control information onreceiving station (receiving frequency) and volume from an input portion932 and transmits a signal to the tuner 924 and the audio signalprocessing circuit 930.

It is needless to say that the present invention is not limited to atelevision device and can be applied to a variety of uses, such as amonitor of a personal computer, a large display medium such as aninformation display board at the train station, the airport, or thelike, or an advertisement display board on the street.

FIG. 25B shows an example of a cellular phone 2301. The cellular phone2301 includes a display portion 2302, an operation portion 2303, and thelike. When the liquid crystal display device described in theabove-described embodiment mode is used for the display portion 2302,mass productivity can be increased.

A portable computer shown in FIG. 25C includes a main body 2401, adisplay portion 2402, and the like. When the liquid crystal displaydevice described in the above-described embodiment mode is used for thedisplay portion 2402, mass productivity can be increased.

Embodiment 1

A microcrystalline silicon film was formed, and results of measuring thecrystallinity of the film by Raman spectroscopy are shown in FIGS. 27Aand 27B.

The microcrystalline silicon film was formed under conditions where theRF power frequency was 13.56 MHz, the film formation temperature was280° C., the flow rate ratio of hydrogen to a silane gas was 100:1, andthe pressure was 280 Pa. FIG. 27A shows Raman scattering spectra andshows a comparison of measurement results of a microcrystalline siliconfilm that was formed with the amount of power of an RF power sourcebeing 100 W and a microcrystalline silicon film with 300 W.

Note that the crystalline peak position of single crystalline silicon isat 521 cm⁻¹. Needless to say, the crystalline peak of amorphous siliconcannot be observed, and only a broad peak is measured at 480 cm⁻¹ asillustrated in FIG. 27B. The microcrystalline silicon film of thisspecification refers to one whose crystalline peak position can beobserved at greater than or equal to 481 cm⁻¹ and less than 520 cm⁻¹when measured with a Raman spectrometer.

The crystalline peak position of the microcrystalline silicon film whichwas formed with the amount of power of an RF power source being 100 W isat 518.6 cm⁻¹; the full width at half maximum (FWHM) is 11.9 cm⁻¹; andthe crystalline/amorphous peak intensity ratio (I_(c)/I_(a)) is 4.1.

The crystalline peak position of the microcrystalline silicon film thatwas formed with the amount of power of an RF power source being 300 W isat 514.8 cm⁻¹; the full width at half maximum (FWHM) is 18.7 cm⁻¹; andthe crystalline/amorphous peak intensity ratio (I_(c)/I_(a)) is 4.4.

As illustrated in FIG. 27A, there is a peak shift and a large differencein full width at half maximum depending on RF power. It can beconsidered that this is because the grain size is likely to be small,because ion bombardment becomes significant at high power and the growthof grains is inhibited. In addition, because the power frequency of aCVD apparatus, with which the microcrystalline silicon film used formeasurement of FIG. 27A was formed, is 13.56 MHz, thecrystalline/amorphous peak intensity ratio (I_(c)/I_(a)) is 4.1 or 4.4.However, it is also confirmed that the crystalline/amorphous peakintensity ratio (I_(c)/I_(a)) can be 6 if the RF power frequency is 27MHz. Accordingly, the crystalline/amorphous peak intensity ratio(I_(c)/I_(a)) can be further increased when the RF power frequency ishigher than 27 MHz, for example, when the RF power frequency is 2.45GHz.

This application is based on Japanese Patent Application serial no.2007-194844 filed with Japan Patent Office on Jul. 26 in 2007, theentire contents of which are hereby incorporated by reference.

1. A display device comprising: an electrode over a substrate; aninsulating film over the electrode; a first semiconductor film over theinsulating film, the first semiconductor film overlapping the electrode;a second semiconductor film over the insulating film, the secondsemiconductor film overlapping the electrode; a first conductive filmover the first semiconductor film; a second conductive film over thesecond semiconductor film; and a third conductive film over the firstsemiconductor film and the second semiconductor film, the thirdconductive film being electrically connected to the first semiconductorfilm and the second semiconductor film.
 2. The display device accordingto claim 1, wherein the electrode is a gate electrode of a transistor.3. The display device according to claim 1, wherein each of the firstsemiconductor film and the second semiconductor film is amicrocrystalline semiconductor film.
 4. The display device according toclaim 3, wherein the microcrystalline semiconductor film is amicrocrystalline silicon film.
 5. The display device according to claim1, wherein each of the first conductive film, the second conductive filmand the third conductive film comprises titanium.
 6. The display deviceaccording to claim 1, wherein the display device is a liquid crystaldisplay device.
 7. The display device according to claim 1, wherein thedisplay device is incorporated into an electronic device selected fromthe group consisting of a video camera, a digital camera, a head-mounteddisplay, a car navigation system, a projector, a car stereo, a personalcomputer, a mobile computer, a cellular phone, and an e-book reader. 8.A display device comprising: an electrode over a substrate; aninsulating film over the electrode; a first semiconductor film over theinsulating film, the first semiconductor film overlapping the electrode;a second semiconductor film over the insulating film, the secondsemiconductor film overlapping the electrode; a first conductivesemiconductor film over the first semiconductor film; a secondconductive semiconductor film over the second semiconductor film; athird conductive semiconductor film over the first semiconductor filmand the second semiconductor film, the third conductive semiconductorfilm being in contact with the insulating film between the firstsemiconductor film and the second semiconductor film; a first conductivefilm over the first conductive semiconductor film; a second conductivefilm over the second conductive semiconductor film; and a thirdconductive film over the third conductive semiconductor film.
 9. Thedisplay device according to claim 8, wherein the electrode is a gateelectrode of a transistor.
 10. The display device according to claim 8,wherein each of the first semiconductor film and the secondsemiconductor film is a microcrystalline semiconductor film.
 11. Thedisplay device according to claim 10, wherein the microcrystallinesemiconductor film is a microcrystalline silicon film.
 12. The displaydevice according to claim 8, wherein each of the first conductivesemiconductor film, the second conductive semiconductor film and thethird conductive semiconductor film includes an impurity element. 13.The display device according to claim 8, wherein each of the firstconductive film, the second conductive film and the third conductivefilm comprises titanium.
 14. The display device according to claim 8,wherein the display device is a liquid crystal display device.
 15. Thedisplay device according to claim 8, wherein the display device isincorporated into an electronic device selected from the groupconsisting of a video camera, a digital camera, a head-mounted display,a car navigation system, a projector, a car stereo, a personal computer,a mobile computer, a cellular phone, and an e-book reader.
 16. A displaydevice comprising: an electrode over a substrate; an insulating filmover the electrode; a first semiconductor film over the insulating film,the first semiconductor film overlapping the electrode; a secondsemiconductor film over the insulating film, the second semiconductorfilm overlapping the electrode; a third semiconductor film over thefirst semiconductor film; a fourth semiconductor film over the secondsemiconductor film; a fifth semiconductor film over the thirdsemiconductor film; a sixth semiconductor film over the fourthsemiconductor film; a seventh semiconductor film over the thirdsemiconductor film and the fourth semiconductor film, the seventhsemiconductor film being in contact with the insulating film between thethird semiconductor film and the fourth semiconductor film; a firstconductive film over the fifth semiconductor film; a second conductivefilm over the sixth semiconductor film; and a third conductive film overthe seventh semiconductor film.
 17. The display device according toclaim 16, wherein the electrode is a gate electrode of a transistor. 18.The display device according to claim 16, wherein each of the firstsemiconductor film and the second semiconductor film is amicrocrystalline semiconductor film.
 19. The display device according toclaim 18, wherein the microcrystalline semiconductor film is amicrocrystalline silicon film.
 20. The display device according to claim16, wherein each of the third semiconductor film and the fourthsemiconductor film is an amorphous semiconductor film.
 21. The displaydevice according to claim 20, wherein the amorphous semiconductor filmis an amorphous silicon film.
 22. The display device according to claim16, wherein each of the fifth semiconductor film, the sixthsemiconductor film and the seventh semiconductor film includes animpurity element.
 23. The display device according to claim 16, whereineach of the first conductive film, the second conductive film and thethird conductive film comprises titanium.
 24. The display deviceaccording to claim 16, wherein the display device is a liquid crystaldisplay device.
 25. The display device according to claim 16, whereinthe display device is incorporated into an electronic device selectedfrom the group consisting of a video camera, a digital camera, ahead-mounted display, a car navigation system, a projector, a carstereo, a personal computer, a mobile computer, a cellular phone, and ane-book reader.
 26. A display device comprising: an electrode over asubstrate; a first insulating film over the electrode; a firstsemiconductor film over the first insulating film, the firstsemiconductor film overlapping the electrode; a second semiconductorfilm over the first insulating film, the second semiconductor filmoverlapping the electrode; a third semiconductor film over the firstsemiconductor film; a fourth semiconductor film over the secondsemiconductor film; a fifth semiconductor film over the thirdsemiconductor film; a sixth semiconductor film over the fourthsemiconductor film; a seventh semiconductor film over the thirdsemiconductor film and the fourth semiconductor film, the seventhsemiconductor film being in contact with the first insulating filmbetween the third semiconductor film and the fourth semiconductor film;a first conductive film over the fifth semiconductor film; a secondconductive film over the sixth semiconductor film; a third conductivefilm over the seventh semiconductor film; and a second insulating filmover the first conductive film, the second conductive film and the thirdconductive film, the second insulating film being in contact with thethird semiconductor film and the fourth semiconductor film.
 27. Thedisplay device according to claim 26, wherein the electrode is a gateelectrode of a transistor.
 28. The display device according to claim 26,wherein each of the first semiconductor film and the secondsemiconductor film is a microcrystalline semiconductor film.
 29. Thedisplay device according to claim 28, wherein the microcrystallinesemiconductor film is a microcrystalline silicon film.
 30. The displaydevice according to claim 26, wherein each of the third semiconductorfilm and the fourth semiconductor film is an amorphous semiconductorfilm.
 31. The display device according to claim 30, wherein theamorphous semiconductor film is an amorphous silicon film.
 32. Thedisplay device according to claim 26, wherein each of the fifthsemiconductor film, the sixth semiconductor film and the seventhsemiconductor film includes an impurity element.
 33. The display deviceaccording to claim 26, wherein each of the first conductive film, thesecond conductive film and the third conductive film comprises titanium.34. The display device according to claim 26, wherein the display deviceis a liquid crystal display device.
 35. The display device according toclaim 26, wherein the display device is incorporated into an electronicdevice selected from the group consisting of a video camera, a digitalcamera, a head-mounted display, a car navigation system, a projector, acar stereo, a personal computer, a mobile computer, a cellular phone,and an e-book reader.